Far-Infrared
Magneto-Optics in Spatially-Separated Electron-Hole Systems
- Search for excitonic ground states -
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Project Summary
Over the past four
decades, there has been considerable interest in correlation effects in systems
with a large number of coexisting electrons and holes. Various possible collective
ground states, including a Bose-Einstein condensate and an excitonic
insulator, have been predicted for semimetals and highly-excited
semiconductors. However, in spite of extensive experimental studies of bulk
materials at low temperatures and at high magnetic fields/pressures, direct
evidence of these ground states have not been given to date.
Recent attention
has been paid to spatially-separated two-dimensional electron-hole (e-h)
(SSEH) systems, in which the e-h separation as well as the e-h
density are controllable. It is now possible to fabricate such devices owing to
the advancement of semiconductor nanotechnology.
In this project we
are designing new types of SSEH systems while at the same time carrying out a
systematic far-infrared (FIR) magneto-optical study in search of exciton
condensation or other collective effects. We expect to see evidence for
many-body interactions in intraband FIR spectra. Although Kohn's theorem
states that cyclotron resonance (CR) is not influenced by carrier-carrier
interactions in a single-component plasma with perfect translational
invariance, the coexistence of the electrons and holes intrinsically breaks
this condition, allowing us to expect direct signatures of collective effects
in the electron and hole CR spectra (even in disorder-free high-quality
samples). Both optically-created e-h systems and "stable" e-h
systems are being investigated. The experiments are performed with a
Time-Domain Terahertz spectrometer and with the Stanford FEL.
This research will
provide new insight into the unusual nature of interacting many-particle
systems, but equally important, the realization of an e-h ground state
in semiconductors would lead to the development of novel semiconductor devices.
In particular, new observations in the FIR (or THz) spectral range would lead
to breakthrough devices that operate in this technologically little-explored
frequency range (0.1-10 THz).
Background
Bose-Einstein
Condensation of Excitons
Bose-Einstein condensation (BEC) is one of the most striking quantum phenomena,
in which a macroscopic number of particles all go into the same quantum state.
It is well known that this phenomenon gives rise to superfluidity in liquid
helium. The search for condensation in other systems such as excitons in
semiconductors is an exciting field of research. The possibility of BEC of
excitons in semiconductors has fascinated a number of authors for many years [e.g., Moskalenko 1962;
Blatt et al. 1962; Casella 1963; Keldysh and Kozlov 1967, 1968; Kohn and
Sherrington 1970; Hanamura and Haug 1974; Lerner and Lozovik 1978, 1981;
Dzyubenko and Lozovik 1983, 1984, 1991; Paquet et al. 1985]. However, no direct
experimental evidence has been given to date (a different type of condensation
into a metallic liquid state or a "droplet" has been observed in
highly-excited silicon and germanium [Rice 1977; Hensel 1977]).
Semiconductor-Semimatal
Transition
According to the elementary one-electron band theory, crystalline solids with
an even number of electrons per unit cell are classified into either
semiconductors (insulators) or semimetals. In semiconductors an integral number
of energy bands are fully occupied by electrons while the rest are completely
empty, whereas in semimetals partially-filled conduction-band and valence-band
with equal carrier densities with opposite carrier signs coexist at different
points in k space as a consequence of band overlap. The important
parameter here to distinguish between the two is obviously the fundamental
energy gap, Eg; i.e., Eg > 0 for semiconductors
and Eg < 0 for semimetals.
Thus, according to the one-electron model, if one reduces Eg continuously from positive
to negative values by varying externally applied pressure, a
semiconductor-semimetal (S-S) transition should occur at Eg = 0 without any
discontinuous change in the physical properties of the system.
The
Excitonic Insulator
It was N.F. Mott (1961) who first pointed out that the above one-electron model
is not correct in the neighborhood of the S-S transition. When Eg begins to be negative, a
very small number of electrons and holes start to populate the conduction and
valence bands, respectively. They attract each other via their mutual Coulomb
interaction, which is only insignificantly screened because of the small
number of carriers present, and hence bind to form an insulator: i.e., the
normal semimetallic ground state would be unstable against the formation of
excitons. When one reduces Eg further, the carrier densities increase, and so the
excitonic state should die out due to screening. Thus there must be a point Eg = E0, where the normal
semimetallic state is recovered. Subsequent to this idea, R.S. Knox (1963) made
a similar observation for the semiconducting side of the S-S transition. If the
exciton binding energy, EB, exceeds the energy gap, Eg, then the excitation (i.e.,
creation) energy of the exciton (defined by Eg - EB) becomes negative, indicating an instability
of the normal semiconducting ground state against the spontaneous formation of
excitons. Hence, combining the above two pictures, in the range,
E0 < Eg < EB (E0 < 0, EB > 0),
the normal
semiconducting and semimetallic ground states appear to be unstable.
Excitonic
Instabilities and Excitonic Phases
Following these two intuitive arguments, various authors investigated such an
excitonic instability in more detail in the 1960s [e.g., Keldysh and Kopaev
1965; des Cloizeaux 1965; Kozlov and Maksimov 1965, 1966; Baklanov and Chaplik
1965; Jérome et al. 1967; Zittartz 1967a, 1967b, 1968a, 1968b; Kohn
1967, 1968; Halperin and Rice 1968a, 1968b]. It was shown by des Cloizeaux (1965) that in the
excitonic insulator the crystal symmetry is broken, similar to the charge/spin
density wave states. A BCS-like theory was developed by Jérome et al.
(1967), who pointed out the similarity between the excitonic insulator state
and the superconducting state. According
to the theory of Kozlov and Maksimov (1965), the excitonic insulator phase
should exist in the vicinity of the S-S transition below some critical
temperature, Tc, which becomes maximum
around Eg = 0. Kohn (1967, 1968) proposed more
complicated but fascinating phase diagrams, predicting an infinite number of
phase transitions into successively lower excitonic phases. However, such instabilities have not
been experimentally observed in real systems.
Collective
Ground States in Spatially-Separated Electron-Hole Systems
Recently, much attention has been paid to spatially separated 2D electrons and
holes (SSEH) in layered structures since the pioneering work of Russian workers
[Lozovik and
Yudson 1975, 1976; Lozovik and Nishanov 1976; Shevchenko 1976; Kulik and
Shevchenko 1977],
who considered the pairing of electrons and holes across the interface of two
media and the superfluidity of such pairs. A very interesting but complicated
many-particle situation arises in such systems, especially in the presence of
strong perpendicular magnetic fields B. In such a situation, 2D SSEHs,
both Landau quantized, are present and there is the Coulomb attraction between
them as well as e-e and h-h correlations. At very low T
and high B, the ground state of such a system could be a dipole-density-wave
state (a crystalline state of dipoles) [Yoshioka and Fukuyama 1978], a 2D excitonic insulator [Kuramoto and Horie 1978], independent Laughlin
(fractional quantum Hall) states, coupled Wigner solid states [Yoshioka and MacDonald
1990],
excitonic charge-density-wave state [Chen and Quinn 1991], or anyonic ions [Chen and Quinn 1993], depending on the layer
separation, temperature, and magnetic field. Owing to the advancement of
semiconductor nanotechnology, it has now become possible to fabricate a variety
of quantum-confined e-h systems in a well-controlled manner. Recent
interesting experimental observations in SSEH systems [Fukuzawa 1990; Kash 1991;
Sivan 1992; Butov 1994; Kono 1994; Cheng 1995; Kono 1997; Butov and Filin 1998;
Negoita 1999]
have rekindled interest in this old problem, and many theoretical papers have
been published in recent years [Tso 1993; Shevchenko 1994, 1997, 1998; Korolev and Liberman 1994;
Swierkowski 1995; Wang 1995; Zhu 1995; Östreich 1996; Vignale and MacDonald
1996; Yudson 1996; Naveh and Laikhtman 1996; Sham 1996; Chu and Chu 1997;
Lozovik and Berman 1997; Lozovik and Ruvinskii 1997; Reyes and del
Castillo-Mussot 1998; Conti 1998; Jan and Lee 1998; Laikhtman 1998]. All these theoretical
investigations strongly suggest the existence of excitonic condensates, urging
experimentalists to discover more interesting effects.
Project Description
Systems
Studied
In addition to
designing and creating new types of spatially-separated e-h (SSEH)
devices, we are currently investigating three systems: (a) excitons in undoped
GaAs/AlGaAs coupled double quantum wells, (b) indirect excitons in undoped
GaAs/AlAs type-II quantum wells, and (c) spatially-separated degenerate e-h
systems in AlSb-InAs-AlSb-GaSb-AlSb structures. Schematic band diagrams for
these structures are shown in Fig. 3.

Direct excitons in
undoped GaAs/AlGaAs quantum wells are very important since they provide a
simple model system for theoretical analysis [see, e.g., Zhu 1995; Östreich 1996]. However, the short
lifetime (~1 ns) of these excitons makes it difficult to achieve a large
population of cold excitons. As suggested and demonstrated by Fukuzawa et
al. (1990) and Kash et al. (1991), in a coupled double quantum well
in a DC perpendicular electric field, lifetimes as long as ~100 ns can be
achieved due to the smaller e-h wavefunction overlap. This bias electric
voltage is applied to spatially separate the electrons and holes after optical
pumping [see Fig. 3(a)]. Even longer exciton lifetimes (as long as 10 us) have
been reported for GaAs/AlAs coupled quantum well structures [Fig. 3(b)], in
which electrons in the AlAs layer are at the X point and holes in the GaAs
layer are at the gamma point, so that the excitons in this structure are
indirect both in real space and k space. Recent observations of PL
anomalies in this system have been interpreted as the onset of exciton
superfluidity and fluctuation near a possible phase transition [Butov 1994]. The third system, an
InAs-AlSb-GaSb heterostructure, is a unique system where spatially-separated
degenerate 2D electrons and holes coexist without optical excitation. In this
specially-designed structure [Fig. 3(c)], as suggested by Datta et al.
(1985) and Zhu et al. (1990), the electrons in the InAs layer and the
holes in the GaSb layer are separated by the large AlSb center barrier, which
prevents unnecessary band-structure mixing between the InAs conduction-band and
the GaSb valence-band, making the e-h coupling purely Coulombic [Kono 1994, 1997a].
Approaches
We use two
different approaches. In the first approach, we monitor the linewidth of the
1s-2p+ transitions of the excitons in these structures while varying other
experimental parameters. It has been shown theoretically that the in-plane
dispersion relations of the excited 2D magneto-exciton states are non-monotonic
[Lerner and
Lozovik 1979; Dzyubenko and Yablonskii 1996a,b; Lozovik and Ruvinskii 1997]. The dispersions for the 1s
and 2p+ states for 2D magneto-excitons are schematically shown in Fig. 4. At
finite temperatures, in addition to the immobile (K = 0) 1s
magneto-excitons, thermally-excited magneto-excitons having finite K
are present. In principle, all the K-conserving (or vertical)
intraexcitonic transitions are possible. Thus, resulting from the combination
of the thermal distribution of the 1s excitons with different K's
and the negative (positive) effective mass of the 2p+ (1s) state, the 1s-2p+
transition is broadened to lower energies at a finite temperature. Therefore,
if a macroscopic number of excitons all go into the K = 0 state
due to condensation, a dramatic line narrowing is expected to occur.

Fig. 4 Schematic in-plane
dispersion relations for the 1s and 2p+ states of 2D magneto-excitons.
In the second
approach, we monitor the THz optical sidebands [Kono 1997b] while varying experimental parameters. A
recent theoretical study by Östreich et al. (1996) and Sham (1996)
predicts the emergence of second-order nonlinear response, i.e., finite chi(2),
associated with exciton condensation. A second order response, which does not
exist in the normal state because of inversion symmetry, can exist in the
exciton condensate because of its dipole nature. These authors argue that the
second-order response in the exciton condensate arises from replacing one
electric field in the third-order response, which exists in the normal state,
by an order parameter. We can expect, if this theory is correct, that
odd-photon sidebands w =
wNIR +/- (2n + 1)wTHz (n = 1, 2, ...),
which have not been observed in the earlier experiments [Kono 1996, 1997b] due to the existence of
inversion symmetry in the normal state, appear resulting from exciton
condensation. If this effect is observed, it could become the first unambiguous
evidence of exciton condensation.
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